1Gb SPI NAND Flash Memory 3V 104MHz WSON-8 MX35LF1GE4AB-Z4I

• 1Gb SLC NAND Flash
  • Bus: x4
  • Page size: (2048+64) byte
  • Block size: (128K+4K) byte
• Fast Read Access
  • Supports Random data read out by x1 x2 & x4 modes, (1-1-1,1-1-2, 1-1-4)
  • Latency of array to register: 25us
  • Frequency: 104MHz
• Page Program Operation
  • Page program time: 300us (typ)
• Block Erase Operation
  • Block erase time: 1ms (typ.)
• Single Voltage Operation:
  • VCC: 2.7 to 3.6V
• BP bits for block group protection
• Low Power Dissipation
  • Max 30mA Active current (Read/Program/Erase)
• Sleep Mode
  • 50uA (Max) standby current
• High Reliability
  • Program / Erase Endurance: Typical 100K cycles(with internal 4-bit ECC per (512+16) Byte
  • Data Retention: 10 years
• Wide Temperature Operating Range-40°C to +85°C
• Package:8-WSON (8x6mm)
• All packaged devices are RoHS Compliant and Halogen-free.

Note 1. Please refer to the tRD_ECC and tPROG_ECC specifications if internal ECC function is turned on.

Note 2. Which indicates the number of I/O for command, address and data.

The MX35LF1GE4AB is a 1Gb SLC NAND Flash memory device with Serial interface. The memory array of this device adopted the same cell architecture as the parallel NAND, however implementing the industry standard serial interface. An internal 4-bit ECC logic is implemented in the chip, which is enabled by default. The internal ECC can be disabled or enabled again by command. When the internal 4-bit ECC logic is disabled, the host side needs to handle the 4-bit ECC by host micro controller.

Standard export packaging available. Customers can choose from cartons, wooden cases, and wooden pallets according to their requirements.