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IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

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IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

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Brand Name : ISSI

Model Number : IS43TR16256BL-125KBLI

Certification : ROSH

Place of Origin : TWN

MOQ : 1

Payment Terms : Western Union,T/T

Supply Ability : 10000

Delivery Time : 5-8DAY

Packaging Details : T/R

Operating Voltage Range : 1.14V to 1.26V

Data Rate : 2400 MT/s

Packaging Method : Woven tape

Buffering : Unbuffered

Form Factor : DIMM

Data Retention : Retains data as long as power is supplied

Access Time : Typically 5ns to 20ns

Interface : Asynchronous or Synchronous

Rohs : Compliance

Cas Latency : CL17

Universal Packaging : LBGA-64

Installation Method : Surface mount installation

Error Checking : Parity

Organization : 32 k x 8

Operating Voltage : 1.8V to 5V

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DYNAMIC RANDOM ACCESS MEMORY DRAM IS43TR16256BL-125KBLI 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

IS43/46TR16256B, IS43/46TR16256BL,IS43/46TR85120B, IS43/46TR85120BLIntegrated Silicon Solution, 512Mx8, 256Mx16 4Gb DDR3 SDRAM

FEATURES
  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
  • High speed data transfer rates with system frequency upto 1066 MHz
  • 8 internal banks for concurrent operation
  • 8n-Bit pre-fetch architecture
  • Programmable CAS Latency
  • Programmable Additive Latency: 0, CL-1,CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK
  • Programmable Burst Length: 4 and 8
  • Programmable Burst Sequence: Sequential or Interleave
  • BL switch on the fly
  • Auto Self Refresh(ASR)
  • Self Refresh Temperature(SRT)
  • Refresh Interval:7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C
  • Partial Array Self Refresh
  • Asynchronous RESET pin
  • TDQS (Termination Data Strobe) supported (x8 only)
  • OCD (Off-Chip Driver Impedance Adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
  • Write Leveling
  • Up to 200MHz in DLL off mode
  • Operating temperature:Commercial (TC = 0°C to +95°C)Industrial (TC = -40°C to +95°C)Automotive, A1 (TC = -40°C to +95°C)Automotive, A2 (TC = -40°C to +105°C)Automotive, A25 (TC = -40°C to +115°C)Automotive, A3 (TC = -40°C to +125°C)1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C
ADDRESS TABLE
Parameter 512Mx8 256Mx16
Row Addressing A0-A15 A0-A14
Column Addressing A0-A9 A0-A9
Bank Addressing BA0-2 BA0-2
Page size 1KB 2KB
Auto Precharge Addressing A10/AP A10/AP
BL switch on the fly A12/BC# A12/BC#
OPTIONS
  • Configuration: 512Mx8, 256Mx16
  • Package:96-ball BGA (9mm x 13mm) for x1678-ball BGA (8mm x 10.5mm) for x8

IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96

IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96


Product Tags:

4GB Capacity DRAM Chip

      

800MHz Speed DDR3 SDRAM

      

BGA-96 Packaging Memory Module

      
China IS43TR16256BL-125KBLI DYNAMIC RANDOM ACCESS MEMORY DRAM 4GB 256MX16 1.283V 215MA 1.45V 800MHZ PARALLEL 16-BIT BGA-96 wholesale

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